An Integrated ΔΣ A/D Architecture for Smart ISFET

  • D. Garnier-Fernández ENERMAT Division, Institute of Materials Science and Technology (IMRE), University of Havana, CP 10400 Havana, Cuba
  • F. Serra-Graells Instituto de Microelectrónica de Barcelona (IMB-CNM), Consejo Superior de Investigaciones Científicas (CSIC) & Departamento de Microelectrónica y Sistemas Electrónicos, Universitat Autònoma de Barcelona, Barcelona, España
  • C. Jiménez-Jorquera nstituto de Microelectrónica de Barcelona (IMB-CNM), Consejo Superior de Investigaciones Científicas (CSIC), Barcelona, España
  • A. Baldi-Coll nstituto de Microelectrónica de Barcelona (IMB-CNM), Consejo Superior de Investigaciones Científicas (CSIC), Barcelona, España
  • O. Arias de Fuentes Instituto de Ciencia y Tecnología de Materiales (IMRE), Universidad de La Habana, La Habana, Cuba

Abstract

In this paper, we present an architectural and electrical design of an integrated A/D converter configuration, based on ΔΣ modulation, for data acquisition from an ISFET (Ion Sensitive Field Effect Transistor) microsensor, applied to the development of a Smart ISFET. This A/D architecture in continuous-time, incorporates the microsensor as a component of the integrated circuit, together the required electronics for the automatic correction of the ISFET´s offset fulfilling the necessary requirements for the development of a portable device.

Published
Jul 14, 2021
How to Cite
GARNIER-FERNÁNDEZ, D. et al. An Integrated ΔΣ A/D Architecture for Smart ISFET. Revista Cubana de Física, [S.l.], v. 38, n. 1, p. 33-37, july 2021. ISSN 2224-7939. Available at: <https://revistacubanadefisica.org/index.php/rcf/article/view/2021v38p032>. Date accessed: 23 sep. 2021.
Section
Original Articles