Weak Localization and Electron-electron Interaction in the Layered Compound CuFeTe2

  • A. Rivas-Mendoza Departamento de Física, Universidad de Carabobo
  • F. González-Jiménez Universidad Central de Venezuela
  • J. M. Broto Laboratoire National de Champs Magnétiques Intenses, Université de Toulouse
  • H. Rakotob
  • J. González Universidad de Los Andes

Abstract

The study of the electrical properties of the layered compound CuFeTe2 shows that there are three well differentiated conduction regimes depending on the temperature. Below TSDW ~ 300 K the formation of a Spin Density Wave (SDW) state has been reported, in the frame of a metal to non metal transition. Below 100 K (~ TSDW/3) the behavior of the electrical resistance as a function of temperature and magnetic field is attributable to the still present not condensed electrons (quasi particles) in the SDW state. At low temperatures (1.8 - 20K), low current (< 1 mA) and magnetic eld (0<H <6 Tesla), the effects of weak localization and electronic interactions in two dimensions appear. At intermediate temperatures (20 < T < 100 K) a hopping conductivity behavior is observed.

Published
Aug 11, 2011
How to Cite
RIVAS-MENDOZA, A. et al. Weak Localization and Electron-electron Interaction in the Layered Compound CuFeTe2. Revista Cubana de Física, [S.l.], v. 28, n. 1, p. 14-17, aug. 2011. ISSN 2224-7939. Available at: <https://revistacubanadefisica.org/index.php/rcf/article/view/RCF_28-1_14_2011>. Date accessed: 22 june 2024.
Section
Original Articles