GaAsP / InGaAs / GaAs Solar Cells with Quantum Confinement and Balanced Tensions

  • Carlos Iván Cabrera Facultad de Física, Universidad de La Habana
  • Julio César Rimada Instituto de Ciencias y Tecnología de los Materiales (IMRE), Universidad de La Habana
  • Luis Hernández Facultad de Física, Universidad de La Habana

Abstract

A design of de GaAsP/InGaAs/GaAs solar cell is presented that allows to model high efciency devices. The electric eld and stress, tensile and compressive, are considered in order to compute the electron and hole dispersion relation E(k) in conduction and valence band. Similarly, the optical transitions in quantum well and barriers were evaluated to calculate the quantum internal efciency and the photocurrent. GaAsP/ InGaAs/GaAs solar cell is optimized to reach the maximum performance by means of J-V relation. Our model was used to determine the highest efciencies for cells containing quantum wells under varying degrees of strain. We show that cells with highly strained quantum wells achieve high efciencies.

Published
Dec 5, 2011
How to Cite
CABRERA, Carlos Iván; RIMADA, Julio César; HERNÁNDEZ, Luis. GaAsP / InGaAs / GaAs Solar Cells with Quantum Confinement and Balanced Tensions. Revista Cubana de Física, [S.l.], v. 28, n. 1E, p. 1E66-1E70, dec. 2011. ISSN 2224-7939. Available at: <https://revistacubanadefisica.org/index.php/rcf/article/view/RCF_28-1E_066_2011>. Date accessed: 07 june 2023.
Citation Formats
Issue
Vol 28 No 1E (2011): XII Symposium and X Congress of the Cuban Physical Society
Section
Original Articles (E)

This work is licensed under the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.