Single-longitudinal-mode InGaAsSb/AlGaAsSb Lasers for Gas Sensing

  • P. Barrios Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON K1A 0R6, Canada
  • J. Gupta Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON K1A 0R6, Canada
  • J. Lapointe Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON K1A 0R6, Canada
  • G. Aers Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON K1A 0R6, Canada
  • C. Storey Institute for Microstructural Sciences, National Research Council of Canada, Ottawa, ON K1A 0R6, Canada

Abstract

Regrowth-free gain-coupled GaSb-based DFB lasers suitable for gas sensing were fabricated. Threshold currents for 2.4 µm emission of 400 µm-long DFB devices were 45 mA with a total output power of nearly 11 mW in CW operation at 20°C.

Published
Jun 5, 2010
How to Cite
BARRIOS, P. et al. Single-longitudinal-mode InGaAsSb/AlGaAsSb Lasers for Gas Sensing. Revista Cubana de Física, [S.l.], v. 27, n. 1, p. 42-44, june 2010. ISSN 2224-7939. Available at: <https://revistacubanadefisica.org/index.php/rcf/article/view/RCF_27-1_42_2010>. Date accessed: 19 apr. 2024.
Citation Formats
Issue
Vol 27 No 1 (2010)
Section
Original Articles

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