Installation for Measuring the Hysteresis Loop and the Switching Current in Thin Films of Ferroelectric Materials

Abstract

The main characteristic of a material with ferroelectric properties is the hysteresis loop of its polarization. On the other hand, the information about the switching time is necessary in the application of the ferroelectric materials prepared as thin films in random access non volatile memories (NvFeRAM). On the other hand flexible systems to do ferroelectrics measurements can be implemented combining specific equipments controlled by a computer. In this work is described the upgrading of an installation to measure the hysteresis loops and the switching current transitory in thin films. The installation has been developed using the virtual instrumentation techniques, using conventional equipment of measurements coupled to a personal computer through a standard interface IEE488 and LabVIEW.