Influence of Defects on Cathodoluminescence along ZnTexO1-x–ZnO Microstructures Grown by the Vapour-Solid Technique

Abstract

The behaviour of the cathodeluminescence (CL) along elongated ZnO microstructures with isoelectronic Te doping, which were obtained by the vapour – solid technique is presented. The CL intensity changes along the microstructures due to the influence of the defects. Two main defect kinds were considered, the vacancy and the structural disorder. Each defect kind has different influence on the CL intensity, which is observed in the study of selected typical structures. The degree of influence of each defect was analysed from the experimental data. The recombination lifetimes for each defect were also estimated.