Thermal Dependence of the Threshold Current in Quantum Well Semiconductor Lasers

  • M. Sánchez Facultad de Física, Universidad de La Habana, Cuba
  • N. Suárez Rojas Facultad de Física, Universidad de La Habana, Cuba
  • J. A. Martin Facultad de Informática, Universidad de Ciego de Ávila “Máximo Gómez Báez”, Carretera a Morón, Km 9, Ciego de Ávila, Cuba
  • Elis Mon Facultad de Física, Universidad de La Habana, Cuba

Abstract

Results on the temperature dependence of the threshold current density for semiconductor lasers based in different materials are presented, emphasizing in GaInNAs devices. In this case the model considers, the radiative, monomolecular and Auger recombination components. The monomolecular recombination coefficient (Am) was taken independent of temperature; while the radiative coefficient (Br ) was taken as Br ≈ T-1 and for Auger coefficient (CA) an exponential dependence was considered. These coefficients were used as adjustable parameters in the simulation. Results shown that while the monomolecular recombination is the main mechanism responsible for the increment of the threshold current with temperature the Auger component should be considered in all cases although with different weight related with the structure.

Published
Jun 20, 2009
How to Cite
SÁNCHEZ, M. et al. Thermal Dependence of the Threshold Current in Quantum Well Semiconductor Lasers. Revista Cubana de Física, [S.l.], v. 26, n. 1, p. 83-88, june 2009. ISSN 2224-7939. Available at: <https://revistacubanadefisica.org/index.php/rcf/article/view/RCF_26-1_83_2009>. Date accessed: 13 aug. 2022.
Section
Original Articles