Controlled Growth of Atomic Layers

  • O. de Melo Facultad de Física- IMRE, Universidad de La Habana, Cuba
  • E. M. Larramendi Facultad de Física- IMRE, Universidad de La Habana, Cuba

Abstract

The main features of atomic layer epitaxy regime are outlined. In this growth regime the reactants should be supplied periodically under growth conditions that assist the occurrence of a terminated-reaction between each reactant and the growing surface. In each independent reaction or exposure of a reactant the amount of material incorporated on the surface depends on the atomic reconstructions characteristic on the temperature range. So, in this way the layer thickness is determined by the amount of reaction cycles and it is not necessary a good control of the reactant fluxes and exposure times. This makes this technique particularly interesting in nanotechnology where the control of the amount of deposited material and dimensions are crucial. Moreover, in this paper a variant of the atomic layer controlled growth originally designed in the laboratories of the Physics Faculty and the Institute of Science and Technology of Materials of the University of Havana is presented. This technique has been designated as isothermal closed space sublimation. Some characteristics and applications are shown and discussed.

Published
Jun 15, 2009
How to Cite
DE MELO, O.; LARRAMENDI, E. M.. Controlled Growth of Atomic Layers. Revista Cubana de Física, [S.l.], v. 26, n. 1, p. 37-41, june 2009. ISSN 2224-7939. Available at: <https://revistacubanadefisica.org/index.php/rcf/article/view/RCF_26-1_37_2009>. Date accessed: 13 aug. 2022.
Section
Original Articles