Quasi-Bond States of Holes in a Layered Semiconductor Heterostructure: Life Times and Eigenenergies

Abstract

Using the (4x4) Kohn-Lüttinger Hamiltonian and the Multicomponent Scattering Approach (MSA), we determined the eigenenergies and the eigenfunctions of heavy holes (hh) and light holes (lh) in a layered semiconductor heterostructure within the uncoupled regime. For the first time the MSA had been extended to study the hh, lh quasi-bond states lifetimes, and as a bonus leading to novel relation with the eigenenergies. As expected, we verified the appearance of the mini-bands as the numbers of layers in the heterostructure increases, and also the relation between the eigenenergies and resonances for the transmission coefficient. Finally, the mini-band lifetimes distribution was obtained, and we found this quantity to be longer for those energies closest to the mini-band edge.